A self-aligned fabrication process for silicon quantum computer devices

Optimized process for fabrication of free-standing silicon nanophotonic devices

A detailed procedure is presented for fabrication of free-standing silicon photonic devices that accurately reproduces design dimensions while minimizing surface roughness. By reducing charging effects during inductively coupled-plasma reactive ion etching, undercutting in small, high-aspect ratio openings is reduced. Slot structures with a width as small as 40 nm and an aspect ratio of 5.5:1 c...

12.2 A CMOS-compatible Fabrication Process for Scaled Self-Aligned InGaAs MOSFETs

We have developed a scalable gate-last process to fabricate planar self-aligned InGaAs Quantum-well (QW) MOSFETs that relies on extensive use of dry recess. The fabrication sequence yields precise control of all critical transistor dimensions, in particular, the length and thickness of the channel and the access regions. The process involves a combination of anisotropic and isotropic F-based dr...

Development of a Self Aligned CMOS Process for Flash Lamp Annealed Polycrystalline Silicon TFTs

All-silicon quantum computer.

A solid-state implementation of a quantum computer composed entirely of silicon is proposed. Qubits are 29Si nuclear spins arranged as chains in a 28Si (spin-0) matrix with Larmor frequencies separated by a large magnetic field gradient. No impurity dopants or electrical contacts are needed. Initialization is accomplished by optical pumping, algorithmic cooling, and pseudo-pure state techniques...

Silicon Carbide for Novel Quantum Technology Devices

Silicon carbide (SiC) has recently been investigated as an alternative material to host deep optically active defects suitable for optical and spin quantum bits. This material presents a unique opportunity to realise more advanced quantum-based devices and sensors than currently possible. We will summarise key results revealing the role that defects have played in enabling optical and spin quan...